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GLOBALFOUNDRIES-Dresden
- Technology & Integration
2012 - maintenant
Member of Technical Staff (MTS): TCAD team leader at GlobalFoundries Dresden, Technology & Integration
Lead a small team of experienced and skilled TCAD engineers supporting a broad spectrum of both CMOS 28 nm and 20 nm technologies development and 14XM FinFETs
The mission of the team is to support the development of new technologies concerning both process integration and device architecture optimization by using process and device simulation tools. Continuous improvement of the simulation tools and methodologies, either developing and implementing new models, or evaluating and calibrating already existing software
Directly involved in technology transfer form Fab 8 (USA) to Fab1 (Germany) mainly to support 28 nm development
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GLOBALFOUNDRIES-SINGAPORE
- Process and Device Engineer
2010 - 2011
Principal Engineer: GlobalFoundries Singapore Technology & Integration
Directly involved in the development of CMOS technology nodes from 90um down to 40nm, and technology transfer form Fab 7 (Singapore) to Fab 8 (USA)
TCAD simulation/modelling and process and device analysis to support the development of new/advanced devices and architectures (28nm, 20nm nodes)
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STMicroelectronics
- PhD student
2006 - 2009
Reseacher (PhD) STMicroelectronics (Crolles, France)
Work done in the frame of ATOMICS European project in order to extend the capabilities of "Finite Elements (FE) modelling" to the materials and doping processes used at the 32 nm node and beyond
Fields of research concern process and device simulation of advanced transistor, particularly 65nm SOI and 45nm straind Si on relaxed SiGe
