TOURS
RETROUVEZ GRATUITEMENTLe résultat des européennes à Tours ainsi que le résultat des européennes dans l'Indre-et-Loire.
I am Anoop from India...Currently i am doing my PhD on ceramic composites materials for capacitor application in Tours, france. I am working specifically on CaCau3Ti4O12 (CCTO) related composites oxides development for capacitor purpose. CCTO is the center of attractions since more than 20 years because of it,s high permitivity. With the miniaturization of microelectronic devices, the importance of high permittivity materials is increasing rapidly. Dielectric materials can be applied to several devices, including dynamic random access memory (DRAM), ceramic capacitors, and microwave devices. In fact, in both DRAMs as and metal-oxide semiconductor field-effect transistor (MOSFET), the dielectric is often thin enough that the leakage current increases to an intolerable level. In general, previous studies have used a gate oxide such as SiO2 for memory applications. The only notable drawback of SiO2 is its relatively low dielectric constant. The concept of using high dielectric constant materials to reduce the tunneling current was presented. The introduction of high dielectric constant materials is becoming more and more urgent, and finding a suitable material to replace SiO2 is becoming a major issue in current research. CCTO is a high dielectric constant ceramic but dielectric loss for it is still higher (0.1 at 1 kHz) to be used for capacitor application. Now there are various ways to reduce loss of this material. Solid state mixing route has been chosen and when we start mixing two starting powders, we make sure that they are single phase. So the further study of composites will be easier.
As a PhD student, my main object is to find out the co-relation between CCTO composites structure (phases, grains/grain boundaries size and contents) and its dielectric/electrical properties I am trying to mix few oxides (e.g. MgO, MgTiO3, HfO2 etc) with CCTO in order to reduce it's loss and then studying it further. The result is very encouraging and we are able to reduce loss of CCTO ( < 0.04 at 1 kHz at room temperature) without compromising with dielectric constant. Attempt has been made in this thesis to separate the role of grain and grain boundaries in determining dielectric properties. Dielectric properties has been tried to relate to phases present in composite, micro-structure, Grain/Grain boundary size etc. I am also doing Intragrain and intergrain I-V measurement in order to compare the bulk result, results from cole - cole fitting and local I-V measurements.....
I have done my master's (M.Tech.) from IIT Delhi (Solid Stae Materials) which is one of the most prestigious institutes in India.
I have hands on experience in many characterization tools and techniques including XRD, SEM (with EDS),Raman Spectroscopy, AFM, Imedance Measurements, Optical Lithography etc.
Mes compétences :
Ceramics
I. Preparation
Solid State
Semiconductors
Journals
Both skills
X-rays
Transistors
Thermistors
One year teaching assistance
Microsoft Windows XP
Microsoft Windows 9x
Microsoft Windows 2000 Professional
Microsoft Office
Microsoft DOS
Microscopy
Microelectronics
Magazines
MC
Local analysis of the grain and grain boundary con
Capacitors
C Programming Language
Sol-gel
Microsoft Windows
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