Salim TOUATI

En résumé

Entreprises

• DelfMEMS - Group Leader

  2014 - 2015 DelfMEMS was an innovative French Start-Up company in the domain of microsystems for the handset market.
  * The main goal of this team was to elaborate RF demonstration Board for prospects & conferences. These
  cards were used to show the performance of RF MEMS in terms of Radio Frequency performance up to
  8 GHz
  * Manufacturing of Cards for Reliability test ( Life time) ;
  * Working with Quality team to ensure achievement to customer requirements ;
  * Management of an engineering team of 4 people (2 Engineers & 2 technicians) ;
  * Demonstrations at International Conferences and Prospects ;
  * Writing of Application notes, Specifications of Work ;
  * Definition of the procedure for cost follow up and continuous improvement according to company
  objectives
  * International travel business to customer and to subcontractor

• DelfMEMS - Technical Leader

  2010 - 2014 DelfMEMS was an innovative French Start-Up company in the domain of microsystems for the handset market.
  * Set-up of the test & characterization team ;
  * Elaboration of an automated test bench to characterize wafer level devices ;
  * Development of RF power handling test bench ;
  * Development of reliability and life time test bench ;
  * Development of a wafer level RF test bench up to 40 GHz, with high accuracy in terms of insertion losses ;
  * Investigation of non-conformances, contributing to problem solving

• DelfMEMS - Technical leader

  2006 - 2010 DelfMEMS was an innovative French Start-Up company in the domain of microsystems for the handset market.
  * Development & Manufacturing of the first MEMS switch prototype with a totally free membrane (surface
  and bulk micromachining)
  
  * Management of 2 clean room technicians ;
  * These prototypes validated the mechanical principle of DelfMEMS patent of the totally free membrane

• Thales Research Technology III-V Lab. - Design and Process Engineer

  2002 - 2005 * Worked on RF HEMT (High Electron Mobility Transistors) based on AlGaN/GaN heterojunctions for high
  power applications (radars, telecommunication, military applications).
  * Development and fabrication of a wide band gap transistor for power applications
  Project in collaboration with Thales Research Technology III-V Lab.
  
  
  
  Key Skills & Areas of expertise
  
  
  * Engineering Team Management
  * MEMS device and technology ;
  * Test, Characterization and Reliability: RF MEMS, Semiconductor devices, RF & High voltage,
  development of power handling test bench, linearity, life time...
  * Working with RF instruments: Network analyzers, Power meters, RF amplifiers, calibration kit, AWG
  function generator, RF calibration kit, DC bias, coupler..
  * Automation of test bench: LabVIEW (Training Core1, Core 2) & TESTSTAND (Core1), PXI instruments,
  automatic probe station
  * Manufacturing in Clean Room: Micro-fabrication in clean room facilities of RF MEMS on silicon wafer ,

Formations

• University Of Lille

  Villeneuve D'Ascq 2002 - 2007 Doctor of Philosophy
  
  Realization and Characterization of microwave power GaN-based devices''

• Université Lille 1 Sciences Et Technologies

  Villeneuve D'Ascq 2000 - 2001 Master of Science
  
  Micro-technology awarded with honours, university of Lille1

• Université Lille 1 Sciences Et Technologies

  Villeneuve D'Ascq 2000 - 2001 Master of Science
  
  Micro-technology awarded with honours, university of Lille1

Réseau

• Corinne COPPIN