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Jean-Baptiste LERAT

MOUANS-SARTOUX

En résumé

Pas de description

Entreprises

  • AXONIC - Micro/electronics Manager

    2014 - maintenant
  • MXM - Microelectronics/Electronics manager

    ACIGNE 2011 - 2013 Cliquez pour modifier la description du posteNeurostimulation expert
    Electronic / Microelectronic manager and network administrator in MXM
    As manager, I supervise:
    • Development of burning bench for a future neural stimulator (ASIC)
    • Development of test bench production for a future neural stimulator (ASIC)
    • Management of production of a future neural stimulator (ASIC)
    • Creation of new network environment
    • Expertise in neurostimulation devices
  • Neurelec - Microelectronics manager

    2007 - 2011 Cliquez pour modifier la description du posteCochlear implant
    As microelectronic manager in Neurelec, I design a new generation of cochlear implant.
    • Development of an analog / digital ASIC for neurostimulation using Cadence flow (Schematic, simulation, layout, synthesis, placement and routing, verification…)
    • Design of a new wireless transceiver of data and energy
    • Design of monitoring ECAP (Evoked Compound Action Potential). This system enables to remove physiological offset, to amplify signal and reduce physiological noise.
    • Design of test benches for production (ASIC, implant…).
    • Project management (documentation, quality, road map...).
  • INRIA - Analog/DIgital designer

    Le Chesnay 2005 - 2007 Cliquez pour modifier la description du posteNeural stimulation
    Analog / Digital designer in INRIA
    • Design of implantable ASIC in technology 0,35µm High voltage of AMS.
    • Development of Digital Analog Converter 8 bits.
    Tapeout: December 2005.
    • Design of an implantable neural stimulator which provides complex current pulses. This chip generates synchronous and asynchronous stimulations
    Tapeout: November 2006
  • LIRMM - Analog designer

    2004 - 2005 Design of current reference source
    Internship (5 months) in LIRMM (Laboratoire Informatique Robotique et Microélectronique de Montpellier).
    • This current source is realized in 0,35µm technology of AMS. It provides current bias for a Digital / Analog Converter.
    • Design of a SRAM memory in 0,35µm technology of AMS.

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